Biased Photodetectors

The Laser 2000 range of biased photodetectors delivers much higher bandwidths and higher responsivities than may be achieved with bare un-biased detectors.

This is achieved as the reverse bias creates a strong electric field in the p-n junction which increases the drift velocity of the carriers, reducing their transit time. At the same time, the reverse bias also increases the width of the depletion layer, thereby reducing junction capacitance and improving the response time.

Furthermore, the increased width of the depletion layer leads to a larger photosensitive area, which makes it much easier to collect more light.

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ET-2030

Biased silicon photodetector, 1.2GHz, 0.4mm dia. active area, battery biased (220V DC mains adaptor option available)

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ET-2040

Biased silicon photodetector, 25MHz, 4.57mm dia active area,with 220VDC wall plug in power supply

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ET-3000

Biased InGaAs Photodetector, 2Ghz, 100µm dia. active area, battery biased (220V DC mains adaptor option available)

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ET-3010

Biased InGaAs Photodetector, 1.5GHz, 100µm dia. active area, battery biased (220V DC mains adaptor option available)

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ET-3500

>10GHz GaAs & InGaAs Biased Photodetector, 12.5GHz, 32µm dia. active area, (220V DC mains adaptor option available)

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ET-3500F

>10GHz Fibre coupled GaAs & InGaAs Biased Photodetector, 12.5GHz, 32µm dia. active area, (220V DC mains adaptor option available)

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ET-4000

>10GHz GaAs & InGaAs Biased Photodetector, 10GHz, 40µm dia. active area, (220V DC mains adaptor option available)

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ET-4000F

>10GHz Fibre coupled GaAs & InGaAs Biased Photodetector, 10GHz, 40µm dia. active area, (220V DC mains adaptor option available)

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