ET-2030

Biased silicon photodetector, 1.2GHz, 0.4mm dia. active area, battery biased (220V DC mains adaptor option available)

Product Code Description Lead Time Price Quantity Buy / Get Quote
ET-2030 Biased silicon photodetector, 1.2GHz, 0.4mm dia. active area, battery biased (220V DC mains adaptor option available) 2-3 weeks On Request
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Specifications

Active Area:

400µm

Series:

ET

Wavelength Range:

400 - 1100nm

The Laser 2000 range of biased photodetectors delivers much higher bandwidths and higher responsivities than may be achieved with bare un-biased detectors.

This is achieved as the reverse bias creates a strong electric field in the p-n junction which increases the drift velocity of the carriers, reducing their transit time. At the same time, the reverse bias also increases the width of the depletion layer, thereby reducing junction capacitance and improving the response time.

Furthermore, the increased width of the depletion layer leads to a larger photosensitive area, which makes it much easier to collect more light.